NTD20P06L, NTDV20P06L
TYPICAL PERFORMANCE CURVES
(T J = 25 ° C unless otherwise noted)
40
35
30
25
20
V GS = ? 10 V
V GS = ? 9 V
V GS = ? 8 V
V GS = ? 7 V
V GS = ? 6 V
V GS = ? 5.5 V
V GS = ? 5 V
V GS = ? 4.5 V
40
30
20
T J = ? 55 ° C
T J = 25 ° C
T J = 125 ° C
15
V GS = ? 4 V
10
5
V GS = ? 3.5 V
V GS = ? 3 V
10
0
T J = 25 ° C
0
VDS w 10 V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
0.5
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
0.25
? V DS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
V GS = ? 5 V
T J = 125 ° C
T J = 25 ° C
T J = ? 55 ° C
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.025
T J = 25 ° C
V GS = ? 5 V
V GS = ? 10 V
0
0
5
10
15
20
25
30
0
0
3
6
9
12
15
18
21
24
? I D , DRAIN CURRENT (A)
Figure 3. On ? Resistance versus Drain Current
and Temperature
? I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
2
1.8
1.6
1.4
1.2
1
I D = ? 7.5 A
V GS = ? 5 V
10000
1000
100
V GS = 0 V
T J = 150 ° C
T J = 125 ° C
0.8
0.6
0.4
0.2
0
10
1
? 50
? 25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
55
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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相关代理商/技术参数
NTD20P06L-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK
NTD20P06L-1G 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD20P06LG 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD20P06LG 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK
NTD20P06LT4 功能描述:MOSFET -60V -15.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD20P06LT4G 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD20P06LT4G 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK
NTD22 制造商:OTAX Corporation 功能描述: